Method of chemical vapor deposition and reactor therefor
US5749974A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1995 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Jul 13, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.