Compact semiconductor device having excellent electrical characteristics and long time reliability
US5751067A · kind A · utility
5Cited by
12References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device which includes a semiconductor substrate, a first insulator layer on the substrate, a conductor pattern formed by a conductive material and arranged on the first insulator layer, the conductor pattern is overlaid by a reacted conductor layer reacted with the conductive material. The conductor pattern is protected by the reacted conductor layer from corrosion. Preferably, a second insulator layer is covered on the reacted conductor layer and is fixedly adhered to the conductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.