Method of sputter deposition simulation by inverse trajectory calculation
US5751607A · kind A · utility
14Cited by
15References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 25, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Mar 25, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a profile simulation of a thin film deposited on a substrate by sputtering, inverse trajectories from an area concerned of the substrate to a target are calculated by Monte Carlo method in order to reduce time required for the profile simulation. With trajectories arriving to the target and their generation probabilities, the profile simulation is performed applying a string model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.