Semiconductor laser device for use as a light source of an optical disk or the like
US5751756A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | May 12, 1998 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/205
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.