Crystallization process and method of manufacturing thin film transistor using same
US5753544A · kind A · utility
15Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Jul 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystallization process comprising the steps of depositing a polycrystalline silicon layer on a semiconductor substrate, implanting silicon ions into first and second areas of the polycrystalline silicon layer in different amounts such that crystals having a predetermined plane direction remain in the second area and such that the first area becomes amorphous, and performing a thermal treatment to recrystallize the amorphous second area using the crystals having the predetermined plane direction remaining in the first area as a nucleus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.