Method for making shallow trench isolation structure having rounded corners
US5753561A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1996 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Sep 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for making a shallow trench structure in a semiconductor substrate. The method includes: (a) forming a mask over a semiconductor substrate, the mask being provided with an aperture extending therethrough which exposes a region of the semiconductor substrate, the aperture having substantially vertical sidewalls; (b) depositing a blanket of silicon over the mask and within the aperture; (c) anisotropically etching the deposited silicon to form temporary spacers having curved profiles at the sidewalls of the aperture, the temporary spacers transferring the curved profiles to a mouth of a shallow trench being etched at the region of the semiconductor substrate as the temporary spacers are etched away; (d) whereby a shallow trench structure is formed where the mouth has a curved profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.