Back-biasing in asymmetric MOS devices
US5753958A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1995 |
| Grant date | May 19, 1998 |
| Priority date | — |
| Expiry date | Oct 16, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
Abstract
An adjustable threshold voltage MOS device having an asymmetric pocket region is disclosed herein. The pocket region abuts one of a source or drain proximate the device's channel region. The pocket region has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. An MOS device having such pocket region may have its threshold voltage adjusted by applying a potential directly to its pocket region. This capability is realized by providing a contact or conductive tie electrically coupled to the pocket region. This "pocket tie" is also electrically coupled to a metallization line (external to the device) which can be held at a specified potential corresponding to a potential required to back-bias the device by a specified amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.