James B. Burr
110Patents
32h-index
40Co-inventors
90Inventor score
Filing activity: Mar 7, 1983 → May 24, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5719422A | Low threshold voltage, high performance junction transistor | Electricity | 207 | Expired |
| US6489224B1 | Method for engineering the threshold voltage of a device using buried wells | Electricity | 199 | Expired |
| US5923987A | Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface | Electricity | 157 | Expired |
| US6072217A | Tunable threshold SOI device using isolated well structure for back gate | Electricity | 154 | Expired |
| US5622880A | Method of making a low power, high performance junction transistor | Electricity | 135 | Expired |
| US7683442B1 | Raised source/drain with super steep retrograde channel | Electricity | 121 | Active |
| US6882172B1 | System and method for measuring transistor leakage current with a ring oscillator | Physics | 111 | Expired |
| US5650340A | Method of making asymmetric low power MOS devices | Electricity | 100 | Expired |
| US7256639B1 | Systems and methods for integrated circuits comprising multiple body bias domains | Electricity | 100 | Expired |
| US6087892A | Target Ion/Ioff threshold tuning circuit and method | Physics | 95 | Expired |
| US6091283A | Sub-threshold leakage tuning circuit | Physics | 93 | Expired |
| US6048746A | Method for making die-compensated threshold tuning circuit | Physics | 91 | Expired |
| US6218708A | Back-biased MOS device and method | Electricity | 90 | Expired |
| US4565966A | Method and apparatus for testing of electrical interconnection networks | Physics | 87 | Expired |
| US6249027A | Partially depleted SOI device having a dedicated single body bias means | Electricity | 86 | Expired |
| US6121666A | Split gate oxide asymmetric MOS devices | Electricity | 81 | Expired |
| US6303444A | Method for introducing an equivalent RC circuit in a MOS device using resistive wells | Electricity | 75 | Expired |
| US5773863A | Low power, high performance junction transistor | Electricity | 70 | Expired |
| US5780912A | Asymmetric low power MOS devices | Electricity | 68 | Expired |
| US6110783A | Method for forming a notched gate oxide asymmetric MOS device | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6100567A | Tunable threshold SOI device using back gate and intrinsic channel region | Electricity | 57 | Expired |
| US5753958A | Back-biasing in asymmetric MOS devices | Electricity | 55 | Expired |
| US5942781A | Tunable threshold SOI device using back gate well | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6831494B1 | Voltage compensated integrated circuits | Electricity | 51 | Expired |
| US6621318B1 | Low voltage latch with uniform sizing | Electricity | 45 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.