Phase shift mask and method for fabricating the same
US5756235A · kind A · utility
8Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 17, 1996 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Sep 17, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/44
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase shift mask provided with an alignment error measuring pattern which is a phase shift film pattern portion formed in a space defined between dense patterns of the phase shift mask having an alternating type pattern structure so that an error in alignment between a chromium pattern and a phase shift film pattern occurring in the fabrication of the phase shift mask can be measured by checking, through a microscope, a wafer provided with a pattern formed using the phase shift mask. The phase shift film pattern portion is arranged on the central portion of a quartz substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.