Compound semiconductor light emitting device and method of preparing the same
US5756374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 1997 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | May 15, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
Abstract
A compound semiconductor light emitting device of high performance and a method which can industrially prepare the same are provided. The compound semiconductor light emitting device includes a GaAs substrate, a buffer layer consisting of GaN, having a thickness of 10 nm to 80 nm, which is formed on the substrate, an epitaxial layer consisting of Al.sub.x Ga.sub.1-x N(0.ltoreq.x<1) which is formed on the buffer layer, an incommensurate plane which is located on the interface between the buffer layer and the epitaxial layer, a light emitting layer which is formed on the epitaxial layer, and a cladding layer which is formed on the light emitting layer. The buffer layer is formed by organic metal chloride vapor phase epitaxy at a first temperature, while the epitaxial layer is formed by organic metal chloride vapor phase epitaxy at a second temperature which is higher than the first temperature. The light emitting layer preferably consists of In.sub.y Ga.sub.1-y N (0<y<1) which is doped with Mg.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.