Hideki Matsubara
27Patents
8h-index
47Co-inventors
75Inventor score
Filing activity: Jul 18, 1989 → Aug 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6337536B1 | White color light emitting diode and neutral color light emitting diode | Electricity | 139 | Expired |
| US6509651B1 | Substrate-fluorescent LED | Electricity | 112 | Expired |
| US6876003B1 | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6741029B2 | Light emission apparatus and method of fabricating the same | Emerging Cross-Sectional Technologies | 36 | Expired |
| US5843590A | Epitaxial wafer and method of preparing the same | Electricity | 26 | Expired |
| US5665986A | Compound semiconductor light emitting device and method of preparing the same | Emerging Cross-Sectional Technologies | 21 | Expired |
| US4983505A | Optical recording medium | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6642547B2 | Light emitting device | Electricity | 17 | Expired |
| US5864573A | Epitaxial wafer and compound semiconductor light emitting device, and method of fabricating the same | Electricity | 8 | Expired |
| US6348140B1 | Gas sensor with a high combined resistance to lead wire resistance ratio | Physics | 6 | Expired |
| US8235603B2 | Optoelectric conversion module, method for assembling same, and optoelectric information processor using same | Electricity | 5 | Active |
| US5756374A | Compound semiconductor light emitting device and method of preparing the same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6420731B1 | Light emitting diode and manufacturing method thereof | Electricity | 4 | Expired |
| US8155163B2 | Photonic crystal laser and method of manufacturing photonic crystal laser | Electricity | 4 | Active |
| US8605769B2 | Semiconductor laser device and manufacturing method thereof | Electricity | 3 | Active |
| US6872649B2 | Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8633087B2 | Method of manufacturing GaN-based semiconductor device | Electricity | 2 | Active |
| US8012780B2 | Method of fabricating semiconductor laser | Electricity | 2 | Active |
| US5589429A | Aluminum nitride sintered body and process for producing the same | Chemistry; Metallurgy | 2 | Expired |
| US9543084B2 | Switch state detection circuit and switch system | Electricity | 1 | Active |
| US6465273B1 | Method of making ZnSe based light emitting device with in layer using vibration and pressure | Electricity | 1 | Expired |
| US8697550B2 | Method of manufacturing GaN-based film | Electricity | 1 | Active |
| US8274088B2 | Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof | Electricity | 0 | Active |
| US10923297B2 | Switch monitoring device, switch state detection circuit, and a vehicle-mounted switch system | Electricity | 0 | Active |
| US9461460B2 | Circuit control device, circuit system, switch state detection circuit and vehicle | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.