Method for forming zener diode with high time stability and low noise
US5756387A · kind A · utility
13Cited by
11References
11Claims
0Family size
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Key dates
| Filing date | Dec 29, 1995 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Dec 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
Zener diode with high stability in time and low noise for integrated circuits and provided in an epitaxial pocket insulated from the rest of a type N epitaxial layer grown on a substrate of type P semiconductor material. In said pocket are included a type N+ cathode region and a type P anode region enclosing it. The cathode region has a peripheral part surrounding a central part extending in the anode region less deeply than the peripheral part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.