Two-step nitride deposition
US5756404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1995 |
| Grant date | May 26, 1998 |
| Priority date | — |
| Expiry date | Dec 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for fabricating a nitride layer of the semiconductor integrated circuit on a semiconductor substrate in a processing chamber. Source gases are applied to the processing chamber and a first nitride layer is deposited over the semiconductor substrate according to the source gases. The source gases are discontinued and the processing chamber is pumped out. Source gases are again applied to the processing chamber and a second nitride layer is deposited upon the first nitride layer according to the applied source gases. The first and second nitride layers form a combined nitride layer. Four alternate embodiments are set forth. In the first embodiment a predetermined amount of time is waited between the pumpout of the processing chamber and the deposition of the second nitride layer. The amount of time can be approximately ten minutes. In the second embodiment, the processing chamber is purged with nitrogen gas prior to depositing the second nitride layer. The purge can extend for between two minutes and sixty minutes. In the third embodiment the processing chamber is purged with nitrous oxide prior to depositing the second nitride layer. In the fourth embodiment the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.