Device and a method for epitaxially growing objects by cvd
US5759263A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Dec 5, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part. (FIG. 1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.