Method for vapor-phase growth
US5759264A · kind A · utility
3Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Mar 21, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.