CVD reactor for uniform heating with radiant heating filaments
US5759281A · kind A · utility
375Cited by
0References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus for the growth of epitaxial layers is disclosed. The apparatus includes a wafer carrier mounted within a growth chamber, a reactant inlet for introducing a reactant into the chamber, and a heating element mounted within the chamber for heating wafers mounted on the wafer carrier. The heating element is mounted in a manner which permits unrestricted thermal expansion of the heating element therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.