Patent · US Expired

High resolution i-line photoresist of high sensitivity

US5759740A · kind A · utility

15Cited by
5References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 13, 1996
Grant dateJun 2, 1998
Priority date
Expiry dateNov 13, 2016

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/123
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The invention relates to the use of oxime sulfonates of formula 1 ##STR1## wherein R is naphthyl, ##STR2## Ar is an unsubstituted aryl group or an aryl group which carries one or more than one substituent selected from the group consisting of nitro, chloro, bromo, hydroxyl, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 perfluoroalkyl, C.sub.1 -C.sub.4 alkoxy and acid degradable substituent; PA1 R.sub.0 is either a R.sub.1 -X group or R.sub.2 ; PA1 X is an oxygen or a sulfur atom; PA1 R.sub.1 is hydrogen, C.sub.1 -C.sub.4 alkyl or unsubstituted phenyl or phenyl which is substituted by a member selected from the group consisting of chloro, bromo, C.sub.1 -C.sub.4 alkyl and C.sub.1 -C.sub.4 alkoxy, and PA1 R.sub.2 is hydrogen, C.sub.1 -C.sub.4 alkyl or an acid-degradable substituent, as radiation-sensitive photoacid generator in a chemically amplified photoresist which is developable in alkaline medium and is sensitive to radiation of a wavelength in the range from 340-390 nm, and to corresponding positive-working and negative-working photoresists for the cited wavelength range.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.