High resolution i-line photoresist of high sensitivity
US5759740A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Nov 13, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to the use of oxime sulfonates of formula 1 ##STR1## wherein R is naphthyl, ##STR2## Ar is an unsubstituted aryl group or an aryl group which carries one or more than one substituent selected from the group consisting of nitro, chloro, bromo, hydroxyl, C.sub.1 -C.sub.4 alkyl, C.sub.1 -C.sub.4 perfluoroalkyl, C.sub.1 -C.sub.4 alkoxy and acid degradable substituent; PA1 R.sub.0 is either a R.sub.1 -X group or R.sub.2 ; PA1 X is an oxygen or a sulfur atom; PA1 R.sub.1 is hydrogen, C.sub.1 -C.sub.4 alkyl or unsubstituted phenyl or phenyl which is substituted by a member selected from the group consisting of chloro, bromo, C.sub.1 -C.sub.4 alkyl and C.sub.1 -C.sub.4 alkoxy, and PA1 R.sub.2 is hydrogen, C.sub.1 -C.sub.4 alkyl or an acid-degradable substituent, as radiation-sensitive photoacid generator in a chemically amplified photoresist which is developable in alkaline medium and is sensitive to radiation of a wavelength in the range from 340-390 nm, and to corresponding positive-working and negative-working photoresists for the cited wavelength range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.