Method of fabricating semiconductor device having epitaxially grown semiconductor single crystal film
US5759878A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jun 29, 1995 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Jun 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a semiconductor device comprises the steps of preparing a transparent support substrate, forming a first gate electrode comprising semiconductor single crystal silicon by epitaxial growth on the transparent support substrate, forming an insulating film over the first gate electrode, forming a through-hole in the insulating film to expose a portion of the first gate electrode, laterally and epitaxially growing a semiconductor single crystal silicon thin film over the transparent substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.