Method for manufacturing a silicon wafer by using a dopant foil

US5759909A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Herbert Goebel · Gräfelfing, DE
• Vesna Goebel · Reutlingen, DE

Key dates

• Filing date: Oct 17, 1996
• Grant date: Jun 2, 1998
• Expiry date: Oct 17, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2255
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.