Thin film strained layer ferroelectric capacitors

US5760432A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Kazuhide Abe · Tokyo, JP
• Shuichi Komatsu · Yokohama, JP
• Kazuhiro Eguchi · Yokohama, JP
• Takashi Kawakubo · Yokohama, JP

Key dates

• Filing date: Apr 7, 1995
• Grant date: Jun 2, 1998
• Expiry date: Apr 7, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.