Refractory metal-titanium nitride conductive structures
US5760475A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1994 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Nov 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.