Method of and apparatus for measuring lifetime of carriers in semiconductor sample
US5760597A · kind A · utility
8Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Jun 6, 1996 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Jun 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.