Test device for insulated-gate field effect transistor and testing circuit and testing method using the same
US5760600A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 27, 1997 |
| Grant date | Jun 2, 1998 |
| Priority date | — |
| Expiry date | Aug 27, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test device which allows a measurement of a characteristic of an insulated-gate field effect transistor excepting the contact resistance, and a simultaneous measurement of a characteristic of the transistor including the contact resistance and the contact resistance itself, as well as a testing circuit and a testing method which use the test device. The test device includes in addition to a contact (contact for drain) and another contact (contact for source) in the proximity of a gate electrode, contacts remote from the gate electrode are provided in expanded areas of a rectangular impurity diffusion region, and two pairs of terminals wired branched from the contacts are provided. One terminal of each of the pairs of terminals and terminals wired from the remote contacts are used as measurement terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.