Naoki Kasai
32Patents
13h-index
18Co-inventors
78Inventor score
Filing activity: Aug 19, 1988 → Jul 16, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4951117A | Isolation of insulated-gate field-effect transistors | Electricity | 162 | Expired |
| US6030894A | Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si | Electricity | 76 | Expired |
| US5905283A | Method of forming a MOS transistor having gate insulators of different thicknesses | Electricity | 41 | Expired |
| US5811336A | Method of forming MOS transistors having gate insulators of different thicknesses | Electricity | 41 | Expired |
| US6218197A | Embedded LSI having a FeRAM section and a logic circuit section | Electricity | 33 | Expired |
| US5907788A | Semiconductor device capable of easily filling contact conductor plug in contact hole | Electricity | 27 | Expired |
| US6235575A | Semiconductor device and method for manufacturing same | Electricity | 21 | Expired |
| US5821594A | Semiconductor device having a self-aligned type contact hole | Electricity | 20 | Expired |
| US5895948A | Semiconductor device and fabrication process thereof | Electricity | 20 | Expired |
| US5909059A | Semiconductor device having contact plug and method for manufacturing the same | Electricity | 19 | Expired |
| US6768151B2 | Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same | Electricity | 13 | Expired |
| US5912509A | MOS semiconductor device and method of manufacturing the same | Electricity | 13 | Expired |
| US5654236A | Method for manufacturing contact structure capable of avoiding short-circuit | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5840621A | Method for manufacturing contact structure capable of avoiding short-circuit | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5856938A | Small-sized multi-valued semiconductor memory device with coupled capacitors between divided bit lines | Electricity | 13 | Expired |
| US5760600A | Test device for insulated-gate field effect transistor and testing circuit and testing method using the same | Physics | 11 | Expired |
| US6348408B1 | Semiconductor device with reduced number of intermediate level interconnection pattern and method of forming the same | Electricity | 9 | Expired |
| US6465826B2 | Embedded LSI having a FeRAM section and a logic circuit section | Electricity | 8 | Expired |
| US5973371A | Semiconductor device with marginless contact hole | Electricity | 8 | Expired |
| US6653690B1 | Semiconductor device comprising high density integrated circuit having a large number of insulated gate field effect transistors | Electricity | 6 | Expired |
| US5381030A | Semiconductor memory device with improved step protection and manufacturing method thereof | Electricity | 6 | Expired |
| US6352891B1 | Method of manufacturing semiconductor device in which hot carrier resistance can be improved and silicide layer can be formed with high reliability | Electricity | 6 | Expired |
| US6448597B1 | DRAM having a stacked capacitor and a method for fabricating the same | Electricity | 5 | Expired |
| US6300647A | Characteristic-evaluating storage capacitors | Electricity | 4 | Expired |
| US5913121A | Method of making a self-aligning type contact hole for a semiconductor device | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.