Fabrication process of a semiconductor device using a slurry containing manganese oxide
US5763325A · kind A · utility
9Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Jul 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.