Inventor · Yokohama, JP

Akiyoshi Hatada

35Patents
10h-index
24Co-inventors
75Inventor score

Filing activity: Nov 25, 1991 → Dec 13, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7667227B2 Semiconductor device and fabrication method thereof Emerging Cross-Sectional Technologies 67 Active
US7875521B2 Semiconductor device and production method thereof Electricity 18 Active
US7378305B2 Semiconductor integrated circuit and fabrication process thereof Emerging Cross-Sectional Technologies 15 Expired
US7816766B2 Semiconductor device with compressive and tensile stresses Electricity 14 Expired
US5272389A Level shifter circuit Electricity 13 Expired
US6693002B2 Semiconductor device and its manufacture Electricity 12 Expired
US7579617B2 Semiconductor device and production method thereof Electricity 12 Expired
US7202120B2 Semiconductor integrated circuit device and fabrication process thereof Electricity 11 Expired
US6586794B2 Semiconductor device and its manufacture Electricity 11 Expired
US7791064B2 Semiconductor device and fabrication method thereof Emerging Cross-Sectional Technologies 10 Active
US8853673B2 Semiconductor device and fabrication method thereof Emerging Cross-Sectional Technologies 10 Active
US5202908A Shift register Electricity 10 Expired
US7683362B2 Semiconductor device and production method thereof Electricity 10 Active
US5763325A Fabrication process of a semiconductor device using a slurry containing manganese oxide Electricity 9 Expired
US7262465B2 P-channel MOS transistor and fabrication process thereof Electricity 9 Expired
US7518188B2 P-channel MOS transistor and fabrication process thereof Electricity 8 Expired
US9112027B2 Semiconductor device and fabrication method thereof Emerging Cross-Sectional Technologies 8 Active
US7626215B2 Semiconductor device and method of manufacturing the same Electricity 6 Active
US5877089A Slurry containing manganese oxide Electricity 6 Expired
US8466450B2 Semiconductor device and fabrication method thereof Emerging Cross-Sectional Technologies 5 Active
US6159858A Slurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurry Electricity 4 Expired
US7883960B2 Method of manufacturing semiconductor device Electricity 3 Active
US7968414B2 Semiconductor device and production method thereof Electricity 3 Active
US8164085B2 Semiconductor device and production method thereof Electricity 3 Active
US8952535B2 Semiconductor transistor device with barrier interconnects Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.