DMOS transistors having trenched gate oxide

US5763915A · kind A · utility

Assignee

• MageMOS Corporation · US

Inventors

• Fwu-Juan Hshieh · Saratoga, US
• True-Lon Lin · Cupertino, US
• Danny Chi Nim · San Jose, US
• Koon Chong So · Fremont, US
• Yan Man Tsui · Union City, US

Key dates

• Filing date: Feb 27, 1996
• Grant date: Jun 9, 1998
• Expiry date: Feb 27, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve cost savings by simplified device structure and fabrication processes, and also by reducing the required die size. Specifically, in a novel MOSFET device, insulation of mobile ions are achieved by extending the poly gate and metal contacts such that the passivation layer is no longer required and the fabrication process is simplified such that the MOSFET device can be manufactured at a lower price. Furthermore, in another MOSFET device, the gate runner is used to replace the field plate such that the requirement of a field plate as that in a conventional MOSFET device is also eliminated and, by reducing the die size, the cost of manufacture is further reduced.