Yan Man Tsui
31Patents
16h-index
10Co-inventors
70Inventor score
Filing activity: Feb 27, 1996 → Nov 8, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5895951A | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches | Electricity | 146 | Expired |
| US6593620B1 | Trench DMOS transistor with embedded trench schottky rectifier | Electricity | 88 | Expired |
| US6472708B1 | Trench MOSFET with structure having low gate charge | Emerging Cross-Sectional Technologies | 88 | Expired |
| US6475884B2 | Devices and methods for addressing optical edge effects in connection with etched trenches | Electricity | 78 | Expired |
| US5763915A | DMOS transistors having trenched gate oxide | Electricity | 72 | Expired |
| US6657254B2 | Trench MOSFET device with improved on-resistance | Electricity | 65 | Expired |
| US6762098B2 | Trench DMOS transistor with embedded trench schottky rectifier | Electricity | 48 | Expired |
| US6548860B1 | DMOS transistor structure having improved performance | Electricity | 36 | Expired |
| US6518127B2 | Trench DMOS transistor having a double gate structure | Electricity | 29 | Expired |
| US6822288B2 | Trench MOSFET device with polycrystalline silicon source contact structure | Electricity | 23 | Expired |
| US6445037B1 | Trench DMOS transistor having lightly doped source structure | Electricity | 23 | Expired |
| US5668026A | DMOS fabrication process implemented with reduced number of masks | Electricity | 23 | Expired |
| US6707127B1 | Trench schottky rectifier | Electricity | 20 | Expired |
| US6048759A | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown | Electricity | 17 | Expired |
| US5729037A | MOSFET structure and fabrication process for decreasing threshold voltage | Electricity | 17 | Expired |
| US6620691B2 | Semiconductor trench device with enhanced gate oxide integrity structure | Electricity | 16 | Expired |
| US5923065A | Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings | Electricity | 16 | Expired |
| US6404025B1 | MOSFET power device manufactured with reduced number of masks by fabrication simplified processes | Electricity | 15 | Expired |
| US5877529A | Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness | Electricity | 13 | Expired |
| US6740951B2 | Two-mask trench schottky diode | Electricity | 8 | Expired |
| US6518152B2 | Method of forming a trench schottky rectifier | Electricity | 8 | Expired |
| US5883416A | Gate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltage | Electricity | 6 | Expired |
| US5883410A | Edge wrap-around protective extension for covering and protecting edges of thick oxide layer | Electricity | 6 | Expired |
| US6713352B2 | Method of forming a trench MOSFET with structure having increased cell density and low gate charge | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6555895B1 | Devices and methods for addressing optical edge effects in connection with etched trenches | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.