Semiconductor device and method of manufacturing the same
US5763953A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1996 |
| Grant date | Jun 9, 1998 |
| Priority date | — |
| Expiry date | Jan 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/922
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.