Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates

US5766973A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Herbert Goebel · Gräfelfing, DE
• Vesna Goebel · Reutlingen, DE

Key dates

• Filing date: Oct 18, 1996
• Grant date: Jun 16, 1998
• Expiry date: Oct 18, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/174
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.