Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD

US5766981A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• Robert L. Thornton · Los Altos, US
• Ross D. Bringans · Cupertino, US
• G. A. Neville Connell · Cupertino, US
• David W. Treat · San Jose, US
• David P. Bour · Cupertino, US
• Fernando A. Ponce · Tempe, US
• Noble M. Johnson · Menlo Park, US
• Kevin Beernink · Mountain View, US

Key dates

• Filing date: Jan 4, 1995
• Grant date: Jun 16, 1998
• Expiry date: Jan 4, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3414
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.