Process for producing semiconductor components between which contact is made vertically

US5767001A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Emmerich Bertagnolli · Munich, DE
• Helmut Klose · Munich, DE

Key dates

• Filing date: Nov 3, 1995
• Grant date: Jun 16, 1998
• Expiry date: Nov 3, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, conductive connection, this recess is filled with a metal so that said metal is connected to the surface of the metal contact, the rear side of the substrate is removed until the metal projects beyond the rear side, a metallization layer made of a metal having a low melting point, for example AuIn, is applied to the metal contact of the second component, the surface of the second component is provided with a planar layer, the two components are arranged vertically with respect to one another and a permanent contact is produced between the metal of the first component and the metallization layer of the second component by pressing one onto the other and heating.