Capacitively triggered silicon controlled rectifier circuit
US5767537A · kind A · utility
6Cited by
7References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 22, 1996 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Nov 22, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S388/919
Abstract
An SCR circuit formed on a semiconductor substrate includes a well region, a first diffusion region and a second diffusion region in the well region, and a third diffusion region in the substrate. The SCR circuit also includes a capacitor connected between the first diffusion region and the third diffusion region. The junction region between the well region and the diffusion region is forward biased when an electrostatic force is applied to the SCR circuit, thereby triggering the SCR circuit to discharge the electrostatic force.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.