High voltage thin film transistor having a linear doping profile
US5767547A · kind A · utility
29Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 1995 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | May 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention is directed to a thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.