Semiconductor device
US5768303A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1997 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Feb 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2013
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a first conductivity type cladding layer; a second conductivity type cladding layer; an active layer of a semiconductor sandwiched between the first conductivity type cladding layer and the second conductivity type cladding layer; and a second conductivity type superlattice barrier layer sandwiched between the active layer and the second conductivity type cladding layer and having a superlattice structure including a first compound semiconductor having a larger energy band gap than the active layer and a second compound semiconductor having a smaller energy difference in the conduction band than the first compound semiconductor and a larger energy difference in the valence band than the first compound semiconductor, the first and second conductivity type compound semiconductors being alternatingly laminated in at least one pair of layers. The energy barrier provided between the active layer and the second conductivity type cladding layer has a sufficient height to prevent overflow of carriers and to improve LD characteristics, particularly operation at a high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.