Method for removal of photoresist residue after dry metal etch
US5770523A · kind A · utility
24Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1996 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Sep 9, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.