High density semiconductor memory device
US5770874A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1997 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Nov 10, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A high density semiconductor memory device includes: a semiconductor substrate; and a plurality of memory cell groups formed on the semiconductor substrate, each of the memory cell groups including a plurality of memory cells having one common source/drain region, wherein when a surface of the semiconductor substrate is divided into a plurality of areas which are arranged in a matrix of rows extending in a first direction and columns extending in a second direction intersecting the first direction, the memory cell groups are selectively arranged in the areas such that the memory cell groups are located in every other one of the areas arranged in each of the rows and also in every other one of the areas arranged in each of the columns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.