Light absorption modulator and integrated semiconductor laser and modulator

US5771257A · kind A · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Tohru Takiguchi · Tokyo, JP
• Eitaro Ishimura · Tokyo, JP

Key dates

• Filing date: Dec 26, 1996
• Grant date: Jun 23, 1998
• Expiry date: Dec 26, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3434
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A light absorption modulator includes a semiconductor substrate of a first conductivity type; a first cladding layer of the first conductivity type disposed on the substrate; an optical waveguide disposed on the first cladding layer and including a multiple quantum well optical waveguide layer through which light travels and first and second light confinement layers respectively disposed on opposed surfaces of the optical waveguide layer to confine light in the optical waveguide layer; and a second cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the optical waveguide, one of the first and second cladding layers being n type, the one of the first and second light confinement layers that contacts the n type cladding layer being p type, and light traveling through the optical waveguide layer being modulated by applying an electric field to the optical waveguide layer. The electric field strength in the multiple quantum well optical waveguide layer when no reverse bias is applied to the modulator is reduced, whereby the rise time of the optical output from the modulator is reduced.