Patent · US Expired

Process for producing p-type doped layers, in particular, in II-VI semiconductors

US5772759A · kind A · utility

3Cited by

4References

5Claims

0Family size

Assignee

Aixtron, Inc. · DE

Inventors

Klaus Heime · Aachen, DE
Michael Heuken · Aachen, DE

Key dates

Filing date	Oct 8, 1996
Grant date	Jun 30, 1998
Priority date	—
Expiry date	Oct 8, 2016

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3059
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Disclosed is a process for producing p-type doped layers, in particular, in II-VI semiconductors, in which the p-type doped layer is produced in a CVD-step by means of plasma activation of nitrogenated gases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.