Michael Heuken
7Patents
5h-index
15Co-inventors
56Inventor score
Filing activity: Oct 8, 1996 → Jun 8, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7128785B2 | Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates | Chemistry; Metallurgy | 26 | Expired |
| US8217418B1 | Semi-polar semiconductor light emission devices | Electricity | 16 | Active |
| US6964876B2 | Method and device for depositing layers | Chemistry; Metallurgy | 12 | Expired |
| US8624292B2 | Non-polar semiconductor light emission devices | Electricity | 9 | Active |
| US7135073B2 | Method and system for semiconductor crystal production with temperature management | Electricity | 7 | Expired |
| US5772759A | Process for producing p-type doped layers, in particular, in II-VI semiconductors | Electricity | 3 | Expired |
| US7473316B1 | Method of growing nitrogenous semiconductor crystal materials | Chemistry; Metallurgy | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.