SOI substrate having a high heavy metal gettering effect for semiconductor device
US5773152A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 13, 1995 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Oct 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate comprises a buried silicon oxide layer formed directly under an active silicon layer, and a layer containing phosphorus therein formed under the buried silicon oxide layer. The layer containing phosphorus therein acts as the getter layer, so that an effective gettering of heavy metals can be obtained in a wide temperature range from a low temperature region to a high temperature region. In addition, since the silicon oxide layer exists between the active layer and the getter layer, the diffusion of the phosphorus into the active layer is effectively prevented, and therefore, the phosphorus scarely diffuses to the active layer, so that the device manufactured is subjected to almost no adverse influence of the diffusion of the phosphorus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.