Magnetoresistance effect element
US5773156A · kind A · utility
11Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Jan 25, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element comprises a magnetic body obtained by dispersing magnetic metal particles containing at least one magnetic element selected from the group consisting of Fe, Co, and Ni in a semiconductor matrix.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.