Positive resist composition suitable for lift-off technique and pattern forming method
US5773200A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1995 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Dec 15, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive resist composition contains (1) a novolak resin having a weight average molecular weight calculated as polystyrene of 2,000-10,000 as an alkali-soluble resin, (2) a low nucleus compound having a phenolic hydroxyl group and 2-5 benzene rings as a dissolution promoter, and (3) a compound having a 1,2-naphthoquinonediazidosulfonyl group in a molecule and a degree of esterification of at least 65% as a photosensitive agent. By forming a resist layer on a substrate from the positive resist composition, and baking the resist layer at 100.degree.-130.degree. C. before exposure or before development, followed by exposure and development, there is formed a resist pattern having a micro-groove of desired configuration. This resist pattern lends itself to a lift-off technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.