In-situ technique for cleaving crystals
US5773318A · kind A · utility
5Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1996 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Oct 30, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T225/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes techniques for cleaving crystal bodies, e.g. semiconductor laser bars, using thermostatic cleaving tools. Use of such tools allows the cleaving process to occur in an ultra high vacuum chamber without the use of mechanical devices activated from the exterior of the chamber. Cleaving occurs automatically and controllably by locally heating the cleaving tools, thereby deflecting the thermostatic element against the laser bar and causing fracture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.