Method of manufacturing a BIMIS
US5773340A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1995 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | Nov 28, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/152
Abstract
A method of manufacturing an improved bipolar transistor or BiCMOS having a phosphorus-doped polysilicon emitter electrode is disclosed. The method comprises forming an emitter electrode wherein a phosphorus-doped amorphous silicon film is deposited at temperature not higher than 540.degree. C. and then subjected to low temperature annealing treatment at a temperature of 600.degree. C. to 750.degree. C., under which the amorphous silicon is converted to a polysilicon and the phosphorus present in the amorphous silicon film is diffused into a base region to form an emitter region, followed by high temperature/short time annealing treatment at a temperature of 900.degree. C. to 950.degree. C. so that an activation rate of an impurity in a boron-doped polysilicon base electrode or source-drain regions of MOS.cndot.FET is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.