Field of the invention

US5773849A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Mietek Bakowski · Gately Drive, SE
• Ulf Gustafsson · Linköping, SE
• Mats Andersson · Mullsjö, SE

Key dates

• Filing date: Apr 24, 1996
• Grant date: Jun 30, 1998
• Expiry date: Apr 24, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0297

Abstract

A field controlled semiconductor device of SiC has a drain, a highly doped substrate layer on top of the drain and a low doped n-type drift layer on top of the substrate layer. A p-type base layer is located on the drift layer and a vertical trench extends through the base layer. In the trench an n-type channel region extends vertically along a wall of the trench and connects a source region layer to the drift layer. A gate electrode is arranged in the trench to be on the opposite side of the channel region with respect to the base layer.