Method for forming a film on a substrate by activating a reactive gas
US5776557A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Oct 10, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.