Patent · US Expired

Wet-chemical developable, etch-stable photoresist for UV radiation with a wavelength below 200 NM

US5776657A · kind A · utility

9Cited by

5References

8Claims

0Family size

Assignee

OCG Microelectronic Materials, Inc. · US

Inventors

Ulrich Schaedeli · Plasselb, CH
Manfred Hofmann · Hettstadt, DE
Norbert Muenzel · Heitersheim, DE
Arnold Grubenmann · Marly, CH

Key dates

Filing date	Mar 14, 1996
Grant date	Jul 7, 1998
Priority date	—
Expiry date	Mar 14, 2016

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/40
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Photoresist compositions are described, which are sufficiently transparent in the solvent-free state for radiation of a wavelength of approximately 193 nm, and which contain nonaromatic chemical groups, which can be converted into groups with aromatic structural elements (latent aromatic groups) under process conditions, for which an image structure comprised of the resist material is not disrupted. A preferred component with latent aromatic groups is bicyclo3.2.2!nona-6,8-dien-3-one Resist coatings, which are produced with these compositions, show a stability in plasma etching, which is comparable with the stability of conventional resists based on phenolic resins.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.