Method for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitor
US5776788A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Feb 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a PZT strong dielectric film by the sol-gel technique, in which the thickness of the film is substantially no greater than 1000 .ANG.. In another aspect, the drying temperature of the raw material sol-gel solution for forming the PZT dielectric film is maintained within the range of 130.degree.-200.degree. C., and is particularly set lower than the boiling point of the stabilizer contained in the sol-gel raw material and higher than the boiling point of the solvent contained in the sol-gel raw material. As a result of performing the oxidative sintering treatment at a temperature at which perovskite crystals form, it becomes possible to readily form thin films exhibiting a (100) crystal orientation in particular. Additionally, completely crack-free thick films can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.