Process for fabricating connection structures
US5776830A · kind A · utility
13Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1997 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Oct 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.